30V/3A PNP Low V CESAT BJT, Integrated with
20V Trench NMOSFET
The AW3112 is 30V PNP power bipolar transistor
using epitaxial planar technology, integrating with a
20V trench NMOSFET as a switch transistor of
The AW3112 has low V CESAT and high current gain.
It is suitable for linear regulator in battery charging
AW3112 is available in DFN2mm×2mm-6L package. It is
specified among the industrial temperature range of
-40℃ and +150℃.