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AW3112DNR

30V/3A PNP Low V CESAT BJT, Integrated with 20V Trench NMOSFET

The AW3112 is 30V PNP power bipolar transistor using epitaxial planar technology, integrating with a 20V trench NMOSFET as a switch transistor of base. The AW3112 has low V CESAT and high current gain. It is suitable for linear regulator in battery charging application. AW3112 is available in DFN2mm×2mm-6L package. It is specified among the industrial temperature range of -40℃ and +150℃.

Characteristic

l  Low collector-emitter saturation voltage

l  Large current capability

l  High current gain

l  DFN2mm×2mm-6L Package

l  ROHS compliant

Datasheet

Application note

Title Type Size Date Download
DS_AW3112_EN_V1.2_30V 3A PNP LOW VCESAT BJT, INTEGRATED WITH 20V TRENCH NMOSFET.pdf PDF 1M 2019-01-11
  • Control Interface
    Operation Mode
    Max Charge Current (A)
    VOREG
    OTG
    Package (mm)
Package form Number of pins Long(mm) Width(mm) Thick(mm) Pin spacing(mm) Heat sink Package drawing
DFN 2.0×2.0×0.75 -6L(B) 6 2.0 2.0 0.75 0.65 Y
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